zszml-donductoi zpioaucti, line. 20 stern ave. springfield, new jersey 07081 u.s.a. MTP2N80 power field effect transistor n-channel enhancement-mode silicon gate tmos telephone: (973) 376-2922 (212)227-6005 fax; (973) 376-8960 m*mn'. -i*--! haftf ?h b h-- r ? 1 1 - ' 1 j ...m 1 1 0 ' t a j j | 1 i 1 1) ' c 1 h , - ii m ii 7 1 j] -at i ?? ? - r, m - ? ? d ?4 n t? milumutrs pin 1 ciatf, i ntu ; [in inf"; a /o'jr iv tnt ai l p""< *fin 1 ( all iiw'lll aritif *; apf ai n"vf 0 io 2?oab dim win ? 1418 t 407 0 061 f 361 g ?? h !?0 1 03c 11 h10 l 1 is n 4 s3 0 754 r !04 s 115 t 59/ u om v ik max is7s 1019 4ii on 373 ik 383 05i 4!j 139 533 3m 779 139 647 maximum ratings bntlng drain source voltage drain gate voltage (855 - 1 mill gate-source voltage ? continuous ? non-repetitive (tp ^ 50 ^s) drain current ? continuous ? pulsed total power dissipation < tc - 25"c derate above 25"c operating and storage temperature range symbol vdss vdgr vgs vgsm id 'dm pd tj. tsth - - b n inchss min max 0570 0(? 0380 0405 0160 0.190 0025 00.15 0 m! 0 147 009! 0105 0?0 0155 0011 002? 0500 056! 0045 0055 0190 0210 0 100 0 120 0000 0110 0045 0055 0735 0255 oom oow 0045 800 800 *20 *40 2 7 75 0.6 65 to 1 50 unit vdc vdc vdc vpk adc watts wrc "c thermal characteristics thermal resistance junction to cflse junction to ambient to ?04 10220 maximum lead temperature for solrifiinq purposes, 1^8' from case for 5 seconds ?wc idja t| 1.67 30 625 27s "c/vv "c j nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished b> nj semi-conductors is believed to be both accurate and reliable at the time or"going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. ounlitv
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